IRG8P40N120KD-EPBF Description

The IRG8P40N120KD-EPBF is an IGBT 1200 V 60 A 305 W Through Hole TO-247AD. BJT and MOSFET are combined to create the IGBT or Insulated Gate Bipolar Transistor. Additionally, the merger between them is implied by the name. The term "insulated gate" describes a MOSFET's extremely high input impedance. It uses the voltage at its gate terminal to drive its operations rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both types of charge carriers contribute to the current flow. It enables it to operate with very high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device thanks to this hybrid configuration.

IRG8P40N120KD-EPBF Features

• Benchmark Low VCE(ON)

• 10μs Short Circuit SOA

• Positive VCE(ON) Temperature Coefficient

• Square RBSOA and high ILM- rating

• Lead-Free, RoHS compliant

IRG8P40N120KD-EPBF Applications

• Solar Inverters

• Welding

• Industrial Motor Drive

• UPS