IRGB4086PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGB4086PBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
160W
Element Configuration
Single
Power Dissipation
160W
Input Type
Standard
Power - Max
160W
Collector Emitter Voltage (VCEO)
2.96V
Max Collector Current
70A
Collector Emitter Breakdown Voltage
300V
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
70A
Collector Emitter Saturation Voltage
2.1V
Test Condition
196V, 25A, 10Ohm
Vce(on) (Max) @ Vge, Ic
2.96V @ 15V, 120A
IGBT Type
Trench
Gate Charge
65nC
Td (on/off) @ 25°C
36ns/112ns
RoHS Status
RoHS Compliant
IRGB4086PBF Product Details
IRGB4086PBF Description
IRGB4086PBF is a type of IGBT designed based on advanced trench IGBT technology, showing low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. It is specifically optimized for applications in Plasma Display Panels. It is a highly efficient, robust and reliable device for sustain and energy recovery circuits in PDP applications based on its 150°C operating junction temperature and high repetitive peak current capability.
IRGB4086PBF Features
Advanced trench IGBT technology
High repetitive peak current capability
150°C operating junction temperature
low VCE(on) and low EPULSETM rating per silicon area