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IRGB4086PBF

IRGB4086PBF

IRGB4086PBF

Infineon Technologies

IRGB4086PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB4086PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 160W
Element Configuration Single
Power Dissipation 160W
Input Type Standard
Power - Max 160W
Collector Emitter Voltage (VCEO) 2.96V
Max Collector Current 70A
Collector Emitter Breakdown Voltage 300V
Voltage - Collector Emitter Breakdown (Max) 300V
Current - Collector (Ic) (Max) 70A
Collector Emitter Saturation Voltage 2.1V
Test Condition 196V, 25A, 10Ohm
Vce(on) (Max) @ Vge, Ic 2.96V @ 15V, 120A
IGBT Type Trench
Gate Charge 65nC
Td (on/off) @ 25°C 36ns/112ns
RoHS Status RoHS Compliant
IRGB4086PBF Product Details

IRGB4086PBF Description


IRGB4086PBF is a type of IGBT designed based on advanced trench IGBT technology, showing low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. It is specifically optimized for applications in Plasma Display Panels. It is a highly efficient, robust and reliable device for sustain and energy recovery circuits in PDP applications based on its 150°C operating junction temperature and high repetitive peak current capability.



IRGB4086PBF Features


Advanced trench IGBT technology

High repetitive peak current capability

150°C operating junction temperature

low VCE(on) and low EPULSETM rating per silicon area

Package: TO-220A



IRGB4086PBF Applications


PDP applications

Applications in Plasma Display Panels


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