IRGB4620DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGB4620DPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
140W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
140W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
32A
Reverse Recovery Time
68 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.55V
Test Condition
400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 12A
Gate Charge
25nC
Current - Collector Pulsed (Icm)
36A
Td (on/off) @ 25°C
31ns/83ns
Switching Energy
75μJ (on), 225μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
16.51mm
Length
10.67mm
Width
4.83mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.45000
$3.45
50
$2.93040
$146.52
100
$2.53970
$253.97
500
$2.16202
$1081.01
1,000
$1.82339
$1.82339
IRGB4620DPBF Product Details
IRGB4620DPBF Description
IRGB4620DPBF is a kind of insulated gate bipolar transistor with ultrafast soft recovery diode provided by Infineon Technologies. It combines the advantages of the MOSFET and GTR, and the driving power is small and the saturation voltage is reduced. Due to its low VCE(on) and switching losses, IRGB4620DPBF features high efficiency in a wide range of applications and switching frequencies.
IRGB4620DPBF Features
Rugged hard switching performance High power capability Low VCE(on) and switching losses Available in the TO-220AB package