APT80GA90B

new-10%

Manufacturer part number:APT80GA90B

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 900V 145A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT80GA90B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	625W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	625W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	145A
Collector Emitter Breakdown Voltage	900V
Turn On Time	49 ns
Test Condition	600V, 47A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 47A
Turn Off Time-Nom (toff)	320 ns
IGBT Type	PT
Gate Charge	200nC
Current - Collector Pulsed (Icm)	239A
Td (on/off) @ 25°C	18ns/149ns
Switching Energy	1652μJ (on), 1389μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant