HGT1S3N60A4DS9A

new-10%

Manufacturer part number:HGT1S3N60A4DS9A

Manufacturer:Rochester Electronics, LLC

Description:N-CHANNEL IGBT

Case Package:SOT-23

Datasheet:HGT1S3N60A4DS9A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	NOT SPECIFIED
Additional Feature	LOW CONDUCTION LOSS
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	COMMERCIAL
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	70W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	29ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	17A
Turn On Time	17.5 ns
Test Condition	390V, 3A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 3A
Turn Off Time-Nom (toff)	180 ns
Gate Charge	21nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	6ns/73ns
Switching Energy	37μJ (on), 25μJ (off)
RoHS Status	ROHS3 Compliant