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FGA50T65SHD

FGA50T65SHD

FGA50T65SHD

ON Semiconductor

FGA50T65SHD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA50T65SHD Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 319W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 319W
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 100A
Reverse Recovery Time 34.6 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.14V
Test Condition 400V, 50A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
IGBT Type Trench Field Stop
Gate Charge 87nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 22.4ns/73.6ns
Switching Energy 1.28mJ (on), 384μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.39000 $5.39
10 $4.85500 $48.55
450 $3.81093 $1714.9185
900 $3.43688 $3093.192
1,350 $2.92500 $2.925
FGA50T65SHD Product Details

Description


The FGA50T65SHD is an IGBT, 650 V, 50 A Field Stop Trench. The new line of field stop 3rd generation IGBTs from ON Semiconductor, using revolutionary field stop technology, provide the best performance for applications like solar inverters, UPS, welders, telecom, ESS, and PFC, where minimal conduction and switching losses are crucial.



Features


  • Fast Switching

  • Tighten Parameter Distribution

  • RoHS Compliant

  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A

  • 100% of the Parts Tested for ILM(1)

  • High Input Impedance

  • Maximum Junction Temperature: TJ =175°C

  • Positive Temperature Co-efficient for Easy Parallel Operating

  • High Current Capability



Applications


  • Solar Inverter

  • UPS

  • Welder

  • Telecom

  • ESS

  • PFC


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