IRGC4062B Description

The Infineon Technologies IRGC4062B is an insulated gate bipolar transistor with an ultrafast soft healing diode used in Low VCE (ON) Trench IGBT technology.

IRGC4062B  Features

• Low VCE (ON) Trench IGBT Technology

• Low switching losses

• Maximum Junction temperature 175 °C

• 5 μS short circuit SOA

• Square RBSOA

• 100% of the parts tested for ILM

• Positive VCE (ON) Temperature coefficient

• Ultra-fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead-Free Package

IRGC4062B Applications

• Wide range of applications