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SIGC12T60NCX1SA1

  • SIGC12T60NCX1SA1
  • SIGC12T60NCX1SA1

SIGC12T60NCX1SA1

SIGC12T60NCX1SA1

Infineon Technologies

SIGC12T60NCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC12T60NCX1SA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 10A
Test Condition 300V, 10A, 27Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
IGBT Type NPT
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 21ns/110ns
RoHS Status ROHS3 Compliant
SIGC12T60NCX1SA1 Product Details

SIGC12T60NCX1SA1 Description


SIGC12T60NCX1SA1 is a single IGBT from the manufacturer Infineon Technologies with the break down voltage of 400V. The operating temperature of SIGC12T60NCX1SA1 is -55°C~175°C TJ and its Current - Collector (Ic) (Max) is 10A. SIGC12T60NCX1SA1 has 3 pins and it is available in Die packaging way. The Voltage - Collector Emitter Breakdown (Max) of SIGC12T60NCX1SA1 is 600V.



SIGC12T60NCX1SA1 Features


  • 600V NPT technology

  • 100μm chip

  • positive temperature coefficient

  • easy paralleling 



SIGC12T60NCX1SA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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