APT45GR65BSCD10

new-10%

Manufacturer part number:APT45GR65BSCD10

Manufacturer:Microsemi Corporation

Description:INSULATED GATE BIPOLAR TRANSISTO

Case Package:SOT-23

Datasheet:APT45GR65BSCD10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2001
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	543W
Input Type	Standard
Power - Max	543W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	118A
Reverse Recovery Time	80 ns
Collector Emitter Breakdown Voltage	650V
Test Condition	433V, 45A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 45A
IGBT Type	NPT
Gate Charge	203nC
Current - Collector Pulsed (Icm)	224A
Td (on/off) @ 25°C	15ns/100ns
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	RoHS Compliant