IRGS4055PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGS4055PBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Reach Compliance Code
compliant
Rise Time-Max
55ns
Input Type
Standard
Power - Max
255W
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
110A
Power Dissipation-Max (Abs)
255W
Test Condition
180V, 35A, 10 Ω
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 110A
IGBT Type
Trench
Gate Charge
132nC
Td (on/off) @ 25°C
44ns/245ns
Gate-Emitter Voltage-Max
30V
Gate-Emitter Thr Voltage-Max
5V
Fall Time-Max (tf)
198ns
RoHS Status
RoHS Compliant
IRGS4055PBF Product Details
IRGS4055PBF Description
IRGS4055PBF is a 300v PDP trench IGBT. This IGBT is specifically designed for applications in Plasma Display Panels. This IRGS4055PBF utilizes advanced trench IGBT technology to achieve low VcE(on) and low Epul .sE TM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRGS4055PBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recoverycircuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiency