STGW33IH120D datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGW33IH120D Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
220W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGW33
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
220W
Input Type
Standard
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.8V
Max Collector Current
60A
Reverse Recovery Time
85 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
57 ns
Test Condition
960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 20A
Turn Off Time-Nom (toff)
740 ns
Gate Charge
127nC
Current - Collector Pulsed (Icm)
45A
Td (on/off) @ 25°C
46ns/284ns
Switching Energy
1.5mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max
25V
Gate-Emitter Thr Voltage-Max
5.75V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$2.10903
$1265.418
STGW33IH120D Product Details
STGW33IH120D Description
The STGW33IH120D is a 30 A - 1200 V - very fast IGBT. With this IGBT's use of the cutting-edge PowerMESH? technology, switching performance and low on-state behavior are superbly balanced. The resonant or soft switching application is ideally suited for this device.