NGTB50N60L2WG Description

NGTB50N60L2WG developed by ON Semiconductor emerges as an Insulated Gate Bipolar Transistor (IGBT) with a robust and cost-effective Field Stop (FS) Trench construction. Both low on?state voltage and minimal switching loss are provided to enable it well suited for resonant or soft switching applications. It is co-packaged with a rugged co?packaged free-wheeling diode featuring a low forward voltage. The NGTB50N60L2WG IGBT is able to provide high efficiency in resonant or soft switching applications.

NGTB50N60L2WG Features

A rugged co?packaged free wheeling diode

A robust and cost-effective Field Stop (FS) Trench construction

Low on?state voltage 

Minimal switching loss

5us short?circuit capability

NGTB50N60L2WG Applications

Motor drive inverters

Industrial switching

Welding