IRGI4090PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGI4090PBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Supplier Device Package
TO-220AB Full-Pak
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
34W
Element Configuration
Single
Power Dissipation
34W
Input Type
Standard
Power - Max
34W
Collector Emitter Voltage (VCEO)
1.94V
Max Collector Current
21A
Collector Emitter Breakdown Voltage
300V
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
21A
Collector Emitter Saturation Voltage
1.94V
Test Condition
240V, 11A, 10Ohm
Vce(on) (Max) @ Vge, Ic
1.94V @ 15V, 30A
IGBT Type
Trench
Gate Charge
34nC
Td (on/off) @ 25°C
20ns/99ns
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.260299
$1.260299
10
$1.188962
$11.88962
100
$1.121662
$112.1662
500
$1.058172
$529.086
1000
$0.998275
$998.275
IRGI4090PBF Product Details
IRGI4090PBF Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advancedtrench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panelefficiency. Additional features are 150°C operating junction temperature and high repetitive peak currentcapability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDPapplications.