IXSH45N100

new-10%

Manufacturer part number:IXSH45N100

Manufacturer:IXYS

Description:IGBT 1000V 75A 300W TO247

Case Package:SOT-23

Datasheet:IXSH45N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1kV
Max Collector Current	75A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Turn On Time	400 ns
Test Condition	800V, 45A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 45A
Turn Off Time-Nom (toff)	2750 ns
Gate Charge	165nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	80ns/400ns
Switching Energy	15mJ (off)
Gate-Emitter Voltage-Max	20V
VCEsat-Max	2.7 V
Gate-Emitter Thr Voltage-Max	7V
Fall Time-Max (tf)	1500ns
RoHS Status	RoHS Compliant
Lead Free	Lead Free