IXSR35N120BD1

new-10%

Manufacturer part number:IXSR35N120BD1

Manufacturer:IXYS

Description:IGBT 1200V 70A 250W ISOPLUS247

Case Package:SOT-23

Datasheet:IXSR35N120BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	247
Weight	5.3g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2002
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*35N120
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	250W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	180ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	70A
Reverse Recovery Time	40ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.6V
Turn On Time	67 ns
Test Condition	960V, 35A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 35A
Turn Off Time-Nom (toff)	580 ns
IGBT Type	PT
Gate Charge	120nC
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	36ns/160ns
Switching Energy	5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	300ns
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant