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IXSH10N60B2D1

IXSH10N60B2D1

IXSH10N60B2D1

IXYS

Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-247

SOT-23

IXSH10N60B2D1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 600V
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 20A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*10N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 30ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 25 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 60 ns
Test Condition 480V, 10A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
Turn Off Time-Nom (toff) 530 ns
IGBT Type PT
Gate Charge 17nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 30ns/180ns
Switching Energy 430μJ (off)
Height 21.46mm
Length 16.26mm
Width 5.3mm
RoHS Status RoHS Compliant
Lead Free Lead Free

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