IRGP4262DPBF

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Manufacturer part number:IRGP4262DPBF

Manufacturer:Infineon Technologies

Description:IRGP4262DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4262DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Rise Time-Max	45ns
Element Configuration	Single
Input Type	Standard
Power - Max	250W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	60A
Reverse Recovery Time	170 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.7V
Test Condition	400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 24A
Gate Charge	70nC
Current - Collector Pulsed (Icm)	96A
Td (on/off) @ 25°C	24ns/73ns
Switching Energy	520μJ (on), 240μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.7V
Fall Time-Max (tf)	40ns
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free