IRGP4263PBF Description

The IRGP4263PBF is an IGBT 650 V 90 A 300 W Through Hole TO-247AC. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IRGP4263PBF Features

• VCES = 650V

• IC = 60A, TC =100°C

• tSC ≥ 5.5μs, TJ(max) = 175°C

• VCE(ON) typ. = 1.7V @ IC = 48A

• Low VCE(ON) and switching losses

• Square RBSOA and maximum junction temperature 175°C

• Positive VCE (ON) temperature coefficient

• 5.5μs short circuit SOA

• Lead-free, RoHS compliant

IRGP4263PBF Applications

• UPS

• Welding

• Industrial Motor Drive

• Inverters