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IRGPC50F

IRGPC50F

IRGPC50F

Infineon Technologies

IRGPC50F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGPC50F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2017
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature FAST
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 200W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 70A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 39A
RoHS Status Non-RoHS Compliant
IRGPC50F Product Details
IRGPC50F Description

The International Rectifier IRGPC50F is an Insulated Gate Bipolar Transistor (IGBT) with higher useable current densities than comparable bipolar transistors and lower gate-drive requirements than the conventional power MOSFET. They offer significant advantages in a variety of high-voltage, high-current applications.

IRGPC50F Features

Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency (1 to 10kHz)

IRGPC50F Applications

Variable-frequency drives (VFDs),
Electric cars
Trains
Variable-speed refrigerators
Lamp ballasts
Arc-welding machines
Air conditioners

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