IXGH32N60BD1

new-10%

Manufacturer part number:IXGH32N60BD1

Manufacturer:IXYS

Description:IGBT 600V 60A 200W TO247AD

Case Package:SOT-23

Datasheet:IXGH32N60BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFAST™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*32N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	25 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	50 ns
Test Condition	480V, 32A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 32A
Turn Off Time-Nom (toff)	240 ns
Gate Charge	110nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	25ns/100ns
Switching Energy	600μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	150ns
RoHS Status	RoHS Compliant