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IRG4RC10KPBF

IRG4RC10KPBF

IRG4RC10KPBF

Infineon Technologies

IRG4RC10KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC10KPBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Max Power Dissipation 38W
Current Rating 9A
Element Configuration Single
Power Dissipation 38W
Input Type Standard
Power - Max 38W
Collector Emitter Voltage (VCEO) 2.62V
Max Collector Current 9A
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 9A
Collector Emitter Saturation Voltage 2.62V
Test Condition 480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Gate Charge 19nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 11ns/51ns
Switching Energy 160μJ (on), 100μJ (off)
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
IRG4RC10KPBF Product Details

IRG4RC10KPBF Description


An INSULATED GATE BIPOLAR TRANSISTOR is IRG4RC10KPBF.



IRG4RC10KPBF Features


? Short Circuit Rated UltraFast: Designed for high operating frequencies >5.0 kHz and short circuit rated to 10 s at 125 °C, VGE = 15 volts.


? The Generation 4 IGBT design is more efficient than the Generation 3 design.


? TO-252AA packaging, a common form factor


? Free of lead



IRG4RC10KPBF Applications


Switching applications


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