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IXDR35N60BD1

IXDR35N60BD1

IXDR35N60BD1

IXYS

IGBT 600V 38A 125W ISOPLUS247

SOT-23

IXDR35N60BD1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH SPEED
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXD*35N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 125W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 30 ns
Transistor Application POWER CONTROL
Rise Time 70ns
Turn-Off Delay Time 320 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 38A
Reverse Recovery Time 40ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 75 ns
Test Condition 300V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 35A
Turn Off Time-Nom (toff) 390 ns
IGBT Type NPT
Gate Charge 140nC
Current - Collector Pulsed (Icm) 48A
Switching Energy 1.6mJ (on), 800μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $7.83500 $235.05

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