IHW30N100TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IHW30N100TFKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
412W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-247AD
Voltage - Collector Emitter Breakdown (Max)
1000V
Current - Collector (Ic) (Max)
60A
Turn On Time
90 ns
Test Condition
600V, 30A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 30A
Turn Off Time-Nom (toff)
702 ns
IGBT Type
Trench Field Stop
Gate Charge
217nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
35ns/546ns
Switching Energy
1.6mJ (off)
RoHS Status
RoHS Compliant
IHW30N100TFKSA1 Product Details
IHW30N100TFKSA1 Description
IHW30N100TFKSA1 is a 1000v IGBT in TrenchStop and Fieldstop technology with an anti-parallel diode. The Infineon IHW30N100TFKSA1 can be applied in microwave ovens and soft-switching applications due to the following features. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IHW30N100TFKSA1 is in the PG-TO-247-3 package with 412 power dissipation.
IHW30N100TFKSA1 Features
1.1V Forward voltage of antiparallel rectifier diode
Specified for TJmax = 175°C
Low EMI
Qualified according to JEDEC1 for target applications
Application-specific optimization of inverse diode