IXGR48N60C3D1

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Manufacturer part number:IXGR48N60C3D1

Manufacturer:IXYS

Description:IGBT 600V 56A 125W ISOPLUS247

Case Package:SOT-23

Datasheet:IXGR48N60C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*48N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Power - Max	125W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	56A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	45 ns
Test Condition	400V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Turn Off Time-Nom (toff)	187 ns
IGBT Type	PT
Gate Charge	77nC
Current - Collector Pulsed (Icm)	230A
Td (on/off) @ 25°C	19ns/60ns
Switching Energy	410μJ (on), 230μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free