IXYH24N90C3D1

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Manufacturer part number:IXYH24N90C3D1

Manufacturer:IXYS

Description:IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode

Case Package:SOT-23

Datasheet:IXYH24N90C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	44A
Reverse Recovery Time	340 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	900V
Collector Emitter Saturation Voltage	2.7V
Turn On Time	60 ns
Test Condition	450V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 24A
Turn Off Time-Nom (toff)	215 ns
Gate Charge	40nC
Current - Collector Pulsed (Icm)	105A
Td (on/off) @ 25°C	20ns/73ns
Switching Energy	1.35mJ (on), 400μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	ROHS3 Compliant