IRGR4610DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGR4610DPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
350.003213mg
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2012
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
77W
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Element Configuration
Single
Input Type
Standard
Power - Max
77W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
16A
Reverse Recovery Time
74 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Test Condition
400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 6A
Gate Charge
13nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
27ns/75ns
Switching Energy
56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
IRGR4610DPBF Product Details
IRGR4610DPBF Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IRGR4610DPBF Applications
? Appliance Drives
? Inverters
? UPS
IRGR4610DPBF Features
TRENCHSTOP Reverse Conducting(RC)technology for 600v applications offering
Optimised VcEsat and Vfor low conduction losses
Smooth switching performance leading to low EMI levels.Very tight parameter distribution Operating range of 1 to20kHz