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IRGS15B60KPBF

IRGS15B60KPBF

IRGS15B60KPBF

Infineon Technologies

IRGS15B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGS15B60KPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 208W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 22ns
Element Configuration Single
Power Dissipation 208W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 31A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 52 ns
Test Condition 400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Turn Off Time-Nom (toff) 231 ns
IGBT Type NPT
Gate Charge 56nC
Current - Collector Pulsed (Icm) 62A
Td (on/off) @ 25°C 34ns/184ns
Switching Energy 220μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.26000 $1.26
500 $1.2474 $623.7
1000 $1.2348 $1234.8
1500 $1.2222 $1833.3
2000 $1.2096 $2419.2
2500 $1.197 $2992.5
IRGS15B60KPBF Product Details

IRGS15B60KPBF Description

 

IRGS15B60KPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGS15B60KPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGS15B60KPBF has the common source configuration.

 

 

IRGS15B60KPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRGS15B60KPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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