NGTB20N120IHTG Description

NGTB20N120IHTG transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NGTB20N120IHTG MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

NGTB20N120IHTG Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

NGTB20N120IHTG Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display