NGTD13T65F2WP Description

NGTD13T65F2WP developed by ON Semiconductor is a type of Trench Field Stop II IGBT Die for motor drive and inverter applications. It is designed based on Field Stop technology for low VCE(sat) loss to reduce system power dissipation. Based on its specific characteristics, the NGTD13T65F2WP IGBT is well suited for a wide range of applications, including industrial motor drives, 

solar inverters, UPS systems, welding, and more.

NGTD13T65F2WP Features

Low VCE(sat) loss

Field Stop technology

Collector?Emitter Voltage, TJ = 25°C: 650V

Maximum junction temperature TJ : ?55 to +175 °C

NGTD13T65F2WP Applications

Industrial motor drives

Solar inverters

UPS systems

Welding