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IRGS4045DTRLPBF

IRGS4045DTRLPBF

IRGS4045DTRLPBF

Infineon Technologies

IRGS4045DTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGS4045DTRLPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 77W
Rise Time-Max 22ns
Element Configuration Single
Input Type Standard
Power - Max 77W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 12A
Reverse Recovery Time 74 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Gate Charge 19.5nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 27ns/75ns
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 22ns
Radiation Hardening No
RoHS Status RoHS Compliant
IRGS4045DTRLPBF Product Details

IRGS4045DTRLPBF  Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.



IRGS4045DTRLPBF  Features

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery circuits in PDP applications

Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency

High repetitive peak current capability

Lead-Free package


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