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IHW40N120R3FKSA1

  • IHW40N120R3FKSA1
  • IHW40N120R3FKSA1

IHW40N120R3FKSA1

IHW40N120R3FKSA1

Infineon Technologies

IHW40N120R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW40N120R3FKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 429W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 429W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 40A, 7.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 40A
IGBT Type Trench
Gate Charge 335nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/336ns
Switching Energy 2.02mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.016590 $3.01659
10 $2.845840 $28.4584
100 $2.684755 $268.4755
500 $2.532787 $1266.3935
1000 $2.389422 $2389.422
IHW40N120R3FKSA1 Product Details

IHW40N120R3FKSA1 Description


IHW40N120R3FKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode with low forward voltage designed for soft commutation only. Based on TRENCHSTOPTM technology, it is able to deliver high ruggedness, stable temperature behavior, very low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. Therefore, the IHW40N120R3FKSA1 IGBT is well suited for a wide range of applications, including resonant converters, inverterized microwave ovens, and more.



IHW40N120R3FKSA1 Features


High ruggedness

Temperature stable behavior

Very low VCEsat

Easy parallel switching capability

Low EMI



IHW40N120R3FKSA1 Applications


Inductive cooking

Inverterized microwave ovens

Resonant converters

Soft switching applications


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