IXGR40N60B2D1

new-10%

Manufacturer part number:IXGR40N60B2D1

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXGR40N60B2D1 IGBT Single Transistor, Isolated, 60 A, 1.9 V, 167 W, 600 V, TO-247AD, 3 Pins

Case Package:SOT-23

Datasheet:IXGR40N60B2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFAST™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	167W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*40N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	167W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	82ns
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	60A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	38 ns
Test Condition	400V, 30A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Turn Off Time-Nom (toff)	390 ns
IGBT Type	PT
Gate Charge	100nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	18ns/130ns
Switching Energy	400μJ (off)
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free