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IXGH38N60

IXGH38N60

IXGH38N60

IXYS

IGBT 600V 76A 200W TO247AD

SOT-23

IXGH38N60 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 76A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 200 ns
Test Condition 480V, 38A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 38A
Turn Off Time-Nom (toff) 1800 ns
Gate Charge 125nC
Current - Collector Pulsed (Icm) 152A
Td (on/off) @ 25°C 30ns/600ns
Switching Energy 9mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 1.8 V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 1100ns
RoHS Status RoHS Compliant
Lead Free Lead Free

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