IRG4PSC71UPBF

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Manufacturer part number:IRG4PSC71UPBF

Manufacturer:Infineon Technologies

Description:IRG4PSC71UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PSC71UPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-274AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	350W
Current Rating	85A
Number of Elements	1
Element Configuration	Single
Power Dissipation	350W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	34 ns
Transistor Application	POWER CONTROL
Rise Time	50ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	56 ns
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	85A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Turn On Time	79 ns
Test Condition	480V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 60A
Turn Off Time-Nom (toff)	304 ns
Gate Charge	340nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	34ns/56ns
Switching Energy	420μJ (on), 1.99mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	20.8mm
Length	16.0782mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead, Lead Free