NGTB40N60FL2WG

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Manufacturer part number:NGTB40N60FL2WG

Manufacturer:ON Semiconductor

Description:NGTB40N60FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB40N60FL2WG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	366W
Element Configuration	Single
Input Type	Standard
Power - Max	366W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	72 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.85V
Test Condition	400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 40A
IGBT Type	Trench Field Stop
Gate Charge	170nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	84ns/177ns
Switching Energy	970μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	21.08mm
Length	16.26mm
Width	5.3mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free