IXGH30N60B4

new-10%

Manufacturer part number:IXGH30N60B4

Manufacturer:IXYS

Description:IGBT 600V 66A 190W TO247

Case Package:SOT-23

Datasheet:IXGH30N60B4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	190W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	190W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7V
Max Collector Current	66A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	53 ns
Test Condition	400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 24A
Turn Off Time-Nom (toff)	451 ns
IGBT Type	PT
Gate Charge	77nC
Current - Collector Pulsed (Icm)	156A
Td (on/off) @ 25°C	21ns/200ns
Switching Energy	440μJ (on), 700μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant