IRGS4615DTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGS4615DTRRPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
260.39037mg
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
99W
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Element Configuration
Single
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
15A
Reverse Recovery Time
60 ns
Collector Emitter Breakdown Voltage
600V
Current - Collector (Ic) (Max)
23A
Collector Emitter Saturation Voltage
2V
Test Condition
400V, 8A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 8A
Gate Charge
19nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
30ns/95ns
Switching Energy
70μJ (on), 145μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
RoHS Compliant
IRGS4615DTRRPBF Product Details
IRGS4615DTRRPBF Description
IRGS4615DTRRPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGS4615DTRRPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.