IRGP4063-EPBF

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Manufacturer part number:IRGP4063-EPBF

Manufacturer:Infineon Technologies

Description:IRGP4063-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4063-EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	330W
Number of Elements	1
Rise Time-Max	56ns
Element Configuration	Single
Power Dissipation	330W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.14V
Max Collector Current	96A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.65V
Turn On Time	100 ns
Test Condition	400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.14V @ 15V, 48A
Turn Off Time-Nom (toff)	210 ns
IGBT Type	Trench
Gate Charge	95nC
Current - Collector Pulsed (Icm)	144A
Td (on/off) @ 25°C	60ns/145ns
Switching Energy	625μJ (on), 1.28mJ (off)
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	46ns
Height	20.7mm
Length	15.87mm
Width	5.13mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free