Description

The IRG4BC30U is an insulated gate bipolar transistor. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Features

? Generation 4 IGBTs offer the highest efficiency available

? IGBTs optimized for specified application conditions

? Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs

? UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

? Industry standard TO-220AB package

Applications

? Power transistor

? Consumer electronics

? Industrial technology

? The energy sector

? Aerospace electronic devices

? Transportation