STGB30H60DF

new-10%

Manufacturer part number:STGB30H60DF

Manufacturer:STMicroelectronics

Description:STGB30H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB30H60DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	-40°C~175°C TJ
Packaging	Cut Tape (CT)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	260W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGB30
Element Configuration	Single
Input Type	Standard
Power - Max	260W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	60A
Reverse Recovery Time	110 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
IGBT Type	Trench Field Stop
Gate Charge	105nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	50ns/160ns
Switching Energy	350μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max	20V
RoHS Status	ROHS3 Compliant