IRGS8B60KTRLPBF

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Manufacturer part number:IRGS8B60KTRLPBF

Manufacturer:Infineon Technologies

Description:IRGS8B60KTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGS8B60KTRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	260.39037mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	167W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRGS8B60KPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	26ns
Element Configuration	Single
Power Dissipation	167W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	28A
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	43 ns
Test Condition	400V, 8A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 8A
Turn Off Time-Nom (toff)	220 ns
IGBT Type	NPT
Gate Charge	29nC
Current - Collector Pulsed (Icm)	34A
Td (on/off) @ 25°C	23ns/140ns
Switching Energy	160μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	56ns
Height	4.699mm
Length	10.668mm
Width	9.652mm
Radiation Hardening	No
RoHS Status	RoHS Compliant