IRGSL6B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGSL6B60KPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
90W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
13A
Test Condition
400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 5A
IGBT Type
NPT
Gate Charge
18.2nC
Current - Collector Pulsed (Icm)
26A
Td (on/off) @ 25°C
25ns/215ns
Switching Energy
110μJ (on), 135μJ (off)
IRGSL6B60KPBF Product Details
IRGSL6B60KPBF Description
IRGSL6B60KPBF is a 600v N-channel insulated gate bipolar transistor. The transistor IRGSL6B60KPBF provides benchmark motor control efficiency and excellent current sharing in Parallel Operation. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGSL6B60KPBF is in the D2Pak package with 90w Power Dissipation.