IRL1404ZSPBF   Description

   This HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these functions makes the design an extremely efficient and reliable device for use in a variety of applications.

IRL1404ZSPBF    Features

 Logic Level

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free

IRL1404ZSPBF    Applications

The combination of these functions makes the design an extremely efficient and reliable device for use in a variety of applications.