Name: IRL2910PBF
Brand: Infineon Technologies
SKU: IRL2910PBF
Price: 2.70000 USD
Availability: InStock

new-10%

IRL2910PBF

Manufacturer part number:IRL2910PBF

Manufacturer:Infineon Technologies

Description:IRL2910PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRL2910PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	55A
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	55A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 5V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	55A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	48A
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	520 mJ
Recovery Time	350 ns
Nominal Vgs	2 V
Height	8.77mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRL2910PBF Product Details

IRL2910PBF Description

The IRL2910PBF is a single N-channel HEXFET? Power MOSFET that employs advanced processing techniques to obtain the lowest ON-resistance per silicon area feasible. This advantage, combined with the quick switching speed and ruggedized device architecture, results in a very efficient and dependable functioning. At power dissipation levels of up to 50W, the package is universally recommended for all commercial-industrial applications.
I
RL2910PBF Features

Logic level gate drive
Advanced process technology
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

IRL2910PBF Applications

Commercial
Industrial
Power Management