NTF6P02T3G

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NTF6P02T3G

Manufacturer part number:NTF6P02T3G

Manufacturer:ON Semiconductor

Description:NTF6P02T3G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTF6P02T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	44MOhm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-6A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Power Dissipation-Max	8.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	8.3W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 16V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	35A
Dual Supply Voltage	-20V
Height	1.65mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free