Name: NTF6P02T3G
Brand: ON Semiconductor
SKU: NTF6P02T3G
Price: 1.24000 USD
Availability: InStock

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NTF6P02T3G

Manufacturer part number:NTF6P02T3G

Manufacturer:ON Semiconductor

Description:NTF6P02T3G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTF6P02T3G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	44MOhm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-6A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Power Dissipation-Max	8.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	8.3W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 16V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	35A
Dual Supply Voltage	-20V
Height	1.65mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTF6P02T3G Product Details

NTF6P02T3G MOSFET Description

The NTF6P02T3G MOSFET is of P-Channel structure, logic level device that is rated -20 V and -10 A continuous forward Drain current capability. This part can be used in harsh environments but not over 150℃ or higher. It has low input capacitance and low transfer capacitance as well. Besides, it is outstanding in switching performance in that it can perform the fast-speed switch.