STP10NM60ND Overview
A device's maximal input capacitance is 577pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 32 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
STP10NM60ND Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
STP10NM60ND Applications
There are a lot of STMicroelectronics
STP10NM60ND applications of single MOSFETs transistors.
- Consumer Appliances
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- Lighting
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- Uninterruptible Power Supply
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- AC-DC Power Supply
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- Synchronous Rectification for ATX 1 Server I Telecom PSU
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- Motor drives and Uninterruptible Power Supplies
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- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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