IPA057N06N3GXKSA1 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 77 mJ.A device's maximal input capacitance is 6600pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 32 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 60V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).

IPA057N06N3GXKSA1 Features

the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 32 ns
based on its rated peak drain current 240A.

IPA057N06N3GXKSA1 Applications

There are a lot of Infineon Technologies
IPA057N06N3GXKSA1 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples