NDT3055

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NDT3055

Manufacturer part number:NDT3055

Manufacturer:ON Semiconductor

Description:NDT3055 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NDT3055 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Weight	188mg
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	100mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	3.7A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 30V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	4A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	25A
Dual Supply Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	3 V
Height	1.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free