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NDT3055

NDT3055

NDT3055

ON Semiconductor

NDT3055 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDT3055 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 188mg
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Resistance 100mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating3.7A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 30V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 25A
Dual Supply Voltage 60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 3 V
Height 1.8mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7960 items

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NDT3055 Product Details

NDT3055 Description


The NDT3055 is an N-Channel enhancement mode power field effect transistor manufactured by Fairchild using its patented, high cell density, DMOS technology. This ultra-high-density technology is specifically designed to reduce on-state resistance while providing excellent switching performance.


NDT3055 Features


4A, 60V. RDS(ON)=0.100Ω@Vas= 10V.


High-density cell design for extremely low RDS(ON)


High power and current handling capability in a widely used surface mount package.



NDT3055 Applications



Power Management


Consumer Electronics


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