IRF510S

new-10%

Manufacturer part number:IRF510S

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 5.6A D2PAK

Case Package:SOT-23

Datasheet:IRF510S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	5.6A
Number of Channels	1
Power Dissipation-Max	3.7W Ta 43W Tc
Element Configuration	Single
Power Dissipation	43W
Turn On Delay Time	6.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.6A Tc
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9.4 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	5.6A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	180pF
Drain to Source Resistance	540mOhm
Rds On Max	540 mΩ
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead