IRF6668TR1PBF

new-10%

Manufacturer part number:IRF6668TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 80V 55A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6668TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MZ
Number of Pins	5
Supplier Device Package	DIRECTFET™ MZ
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	15mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	80V
Technology	MOSFET (Metal Oxide)
Current Rating	55A
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Element Configuration	Dual
Power Dissipation	2.8W
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 25V
Current - Continuous Drain (Id) @ 25°C	55A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	7.1 ns
Continuous Drain Current (ID)	44A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	80V
Dual Supply Voltage	80V
Input Capacitance	1.32nF
Drain to Source Resistance	12mOhm
Rds On Max	15 mΩ
Nominal Vgs	4 V
Height	533.4μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free